Ultrafast reversible phase change in GeSb films for erasable optical storage
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چکیده
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منابع مشابه
Dynamics of Ultrafast Phase Changes in Amorphous GeSb Films
The existence of nonthermal, ultrafast phase transitions after strong femtosecond laser excitation has been demonstrated in several materials such as silicon [1–3], gallium arsenide [3–6], indium antimonide [7], and carbon [8]. It is accepted that such transitions are induced by a softening of the lattice structure due to the generation of a very high density electron-hole plasma, as first prop...
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